집적전자재료연구실

In this study, we present the fabrication of a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-based resistive random access memory (RRAM) device using a fully vacuum-free and solution-processed fabrication method, realized using a printable top electrode. Three different printable electrodes, namely Ag epoxy, ethylene glycol(EG)-treated PEDOT:PSS, and dimethyl sulfoxide(DMSO..

Resistive random-access memory (RRAM) has been widely considered for its prospective applicability owing to its non-volatile characteristics. In this study, a polymer-based vacuum-free RRAM device fabricated with the conductive polymer, poly(3,4-ethylene-dioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) was proposed. Pristine PEDOT:PSS coated on indium tin oxide (ITO) electrode was used as the ..